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MC74HCT138A 1-of-8 Decoder/ Demultiplexer with LSTTL Compatible Inputs High-Performance Silicon-Gate CMOS The MC74HCT138A is identical in pinout to the LS138. The HCT138A may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. The HCT138A decodes a three-bit Address to one-of-eight active-lot outputs. This device features three Chip Select inputs, two active-low and one active-high to facilitate the demultiplexing, cascading, and chip-selecting functions. The demultiplexing function is accomplished by using the Address inputs to select the desired device output; one of the Chip Selects is used as a data input while the other Chip Selects are held in their active states. http://onsemi.com MARKING DIAGRAMS 16 16 1 PDIP-16 N SUFFIX CASE 648 MC74HCT138AN AWLYYWW 1 16 * * * * * * * Output Drive Capability: 10 LSTTL Loads TTL/NMOS Compatible Input Levels Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 A In Compliance with the Requirements Defined by JEDEC Standard No. 7A Chip Complexity: 122 FETs or 30.5 Equivalent Gates 16 1 SO-16 D SUFFIX CASE 751B 1 HCT138A AWLYWW 16 TSSOP-16 DT SUFFIX CASE 948F 1 A WL YY WW = Assembly Location = Wafer Lot = Year = Work Week HCT 138A ALYW 16 1 ORDERING INFORMATION Device MC74HCT138AN MC74HCT138AD MC74HCT138ADR2 MC74HCT138ADT MC74HCT138ADTR2 Package PDIP-16 SOIC-16 SOIC-16 TSSOP-16 TSSOP-16 Shipping 2000 / Box 48 / Rail 2500 / Reel 96 / Rail 2500 / Reel (c) Semiconductor Components Industries, LLC, 1999 1 March, 2000 - Rev. 7 Publication Order Number: MC74HCT138A/D MC74HCT138A LOGIC DIAGRAM A0 ADDRESS INPUTS A1 A2 1 2 3 15 14 13 12 11 10 9 7 Inputs Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 ACTIVE-LOW OUTPUTS X X L H H H H H H H H X H X L L L L L L L L H X X L L L L L L L L X X X L L L L H H H H X X X L L H H L L H H X X X L H L H L H L H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H FUNCTION TABLE Outputs H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L H H H H H H H H H H H L CS1CS2 CS3 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 CHIP- SELECT INPUTS CS1 CS2 CS3 6 4 5 PIN 16 = VCC PIN 8 = GND H = high level (steady state) L = low level (steady state) X = don't care PIN ASSIGNMENT A0 A1 A2 CS2 CS3 CS1 Y7 GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 IIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIII III I II IIIIIIIIIIIIIII II IIIIIIIIIIIIIII II IIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIII II III I II II I IIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIII II I IIIIIIIIIIIIIII IIIIIIIIIIII Design Criteria Value 30.5 1.5 5.0 Units ea. ns Internal Gate Count* Internal Gate Propagation Delay Internal Gate Power Dissipation Speed Power Product W pJ .0075 *Equivalent to a two-input NAND gate. http://onsemi.com 2 MC74HCT138A II III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I III III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIII I II I I II IIIIIIIIIIIIIIIIIIIIII I II I I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I III I I I I I II I I I II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II II I I I I I III I I I I I II I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II I I I II I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II I I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIII II I IIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII II I II I I III II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II III II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS* Symbol VCC Vin Parameter Value Unit V V V DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) - 0.5 to + 7.0 - 0.5 to VCC + 0.5 - 0.5 to VCC + 0.5 20 25 50 750 500 450 Vout Iin DC Output Voltage (Referenced to GND) DC Input Current, per Pin mA mA mA Iout DC Output Current, per Pin ICC PD DC Supply Current, VCC and GND Pins Power Dissipation in Still Air Plastic DIP SOIC Package TSSOP Package mW Tstg TL Storage Temperature - 65 to + 150 260 This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. v v _C _C Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP, TSSOP or SOIC Package) *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. Derating -- Plastic DIP: - 10 mW/_C from 65_ to 125_C SOIC Package: - 7 mW/_C from 65_ to 125_C TSSOP Package: - 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Min 4.5 0 Max 5.5 Unit V V DC Supply Voltage (Referenced to GND) Vin, Vout TA DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) VCC - 55 0 + 125 500 _C ns tr, tf DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol VIH VIL Parameter Test Conditions VCC V 4.5 5.5 4.5 5.5 4.5 5.5 - 55 to 25_C 2.0 2.0 0.8 0.8 4.4 5.4 v 85_C v 125_C 2.0 2.0 0.8 0.8 4.4 5.4 2.0 2.0 0.8 0.8 4.4 5.4 Unit V V V Minimum High-Level Input Voltage Vout = 0.1 V or VCC - 0.1 V |Iout| 20 A v v Maximum Low-Level Input Voltage Vout = 0.1 V or VCC - 0.1 V |Iout| 20 A VOH Minimum High-Level Output Voltage Vin = VIH or VIL |Iout| 20 A v v v v Vin = VIH or VIL |Iout| 4.0 A Vin = VIH or VIL |Iout| 20 A Vin = VIH or VIL |Iout| 4.0 mA 4.5 4.5 5.5 3.98 0.1 0.1 3.84 0.1 0.1 3.7 0.1 0.1 VOL Maximum Low-Level Output Voltage V 4.5 6.0 5.5 0.26 0.33 0.4 Iin Maximum Input Leakage Current Vin = VCC or GND Vin = VCC or GND Iout = 0 A 0.1 4.0 1.0 40 1.0 160 A A ICC Maximum Quiescent Supply Current (per Package) ICCIIIIIIIII in = 2.4 V, Any One Input Additional Quiescent Supply V Current Vi = VCC or GND, Other In uts GND Inputs in lout = 0 A - 55_C 2.9 25_C to 125_C 2.4 5.5 mA NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D). http://onsemi.com 3 MC74HCT138A AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V 10%, CL = 50 pF, Input tr = tf = 6.0 ns) II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I Guaranteed Limit Symbol tPLH, tPHL tPLH, tPHL tPLH, tPHL tTLH, tTHL tr, tf Cin Parameter - 55 to 25_C 30 27 30 15 v 85_C 38 34 38 19 v 125_C 45 41 45 22 Unit ns ns ns ns ns Maximum Propagation Delay, Input A to Output Y (Figures 1 and 4) Maximum Propagation Delay, CS1 to Output Y (Figures 2 and 4) Maximum Output Transition Time, CS2 or CS3 to Output Y (Figures 3 and 4) Maximum Output Transition Time, Any Output (Figures 2 and 4) Maximum Input Rise and Fall Time Maximum Input Capacitance 500 10 500 10 500 10 pF NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D). Typical @ 25C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Enabled Output)* 51 pF * Used to determine the no-load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D). EXPANDED LOGIC DIAGRAM 15 Y0 14 Y1 A0 1 13 Y2 A1 2 12 Y3 11 A2 3 10 CS3 CS2 5 4 9 Y4 Y5 Y6 7 Y7 CS1 6 http://onsemi.com 4 MC74HCT138A SWITCHING WAVEFORMS VALID 1.3 V GND tPLH 1.3 V tPHL OUTPUT Y tTHL VALID 3V INPUT A INPUT CS1 tPHL 90% 1.3 V 10% tTLH tr 2.7 V 1.3 V 0.3 V tPLH tf 3V GND OUTPUT Y Figure 1. Figure 2. tr INPUT CS2, CS3 tPHL OUTPUT Y tTHL 90% 1.3 V 10% 2.7 V 1.3 V 0.3 V tf 3V GND tPLH tTLH Figure 3. TEST CIRCUIT TEST POINT OUTPUT DEVICE UNDER TEST CL* *Includes all probe and jig capacitance Figure 4. http://onsemi.com 5 MC74HCT138A PACKAGE DIMENSIONS PDIP-16 N SUFFIX CASE 648-08 ISSUE R -A - 16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M S INCHES MILLIMETERS MIN MAX MIN MAX 0.740 0.770 18.80 19.55 0.250 0.270 6.85 6.35 0.145 0.175 4.44 3.69 0.015 0.021 0.53 0.39 0.040 0.070 1.77 1.02 0.100 BSC 2.54 BSC 0.050 BSC 1.27 BSC 0.008 0.015 0.38 0.21 0.110 0.130 3.30 2.80 0.295 0.305 7.74 7.50 10 0 10 0 0.020 0.040 1.01 0.51 B 1 8 F S C L -T - H G D 16 PL 0.25 (0.010) M SEATING PLANE K J TA M M SOIC-16 D SUFFIX CASE 751B-05 ISSUE J -A - 16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 4.00 3.80 1.75 1.35 0.49 0.35 1.25 0.40 1.27 BSC 0.25 0.19 0.25 0.10 7 0 6.20 5.80 0.50 0.25 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0 7 0.229 0.244 0.010 0.019 -B - 1 8 P 8 PL 0.25 (0.010) M B M G F K C -T SEATING - PLANE R X 45 M D 16 PL 0.25 (0.010) M J T B S A S http://onsemi.com 6 MC74HCT138A PACKAGE DIMENSIONS TSSOP-16 DT SUFFIX CASE 948F-01 ISSUE O 16X K REF 0.10 (0.004) 0.15 (0.006) T U S M TU S V S K K1 16 2X L/2 9 J1 B -U- L PIN 1 IDENT. 1 8 SECTION N-N J N 0.25 (0.010) 0.15 (0.006) T U S A -V- N F DETAIL E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 --- 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 --- 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ C 0.10 (0.004) -T- SEATING PLANE H D G DETAIL E http://onsemi.com 7 EEE CCC EEE CCC M -W- DIM A B C D F G H J J1 K K1 L M MC74HCT138A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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